MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P5MNM4P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 4.2
  • RDS(ON) @4,5V [mΩ]: 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 129
  • Manufacturer: Eris
P5MNM4P2

P5MNM4P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 4.4
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 142
  • Manufacturer: Eris
P5MNM4P4

P5MNM4P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 4.5
  • RDS(ON) @4,5V [mΩ]: 6.7
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 120
  • Manufacturer: Eris
P5MNM4P5

P5MNM5P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5.5
  • RDS(ON) @4,5V [mΩ]: 7.8
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
P5MNM5P5

P5MNM5P5A

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5.5
  • RDS(ON) @4,5V [mΩ]: 8.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 103
  • Manufacturer: Eris
P5MNM5P5A

P5MNM6P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 110
  • Manufacturer: Eris
P5MNM6P0

P5MNM6P0A

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 95
  • Manufacturer: Eris
P5MNM6P0A

P5MNM7P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7.2
  • RDS(ON) @4,5V [mΩ]: 11.2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 65
  • Manufacturer: Eris
P5MNM7P2

P5MNM7P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7.6
  • RDS(ON) @4,5V [mΩ]: 10.4
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 103
  • Manufacturer: Eris
P5MNM7P6

P5MNM8P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 8
  • RDS(ON) @4,5V [mΩ]: 12.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 91
  • Manufacturer: Eris
P5MNM8P0
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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