MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P5MNG012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
P5MNG012

P5MNG021

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 21
  • RDS(ON) @4,5V [mΩ]: 24
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 44
  • Manufacturer: Eris
P5MNG021

P5MNG1P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 1.6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 236
  • Manufacturer: Eris
P5MNG1P6

P5MNG2P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 2
  • RDS(ON) @4,5V [mΩ]: 3.2
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 140
  • Manufacturer: Eris
P5MNG2P0

P5MNG2P8

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 65
  • RDS(ON) @10V [mΩ]: 2.8
  • RDS(ON) @4,5V [mΩ]: 5.4
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 130
  • Manufacturer: Eris
P5MNG2P8

P5MNG3P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3
  • RDS(ON) @4,5V [mΩ]: 4.5
  • VGS max, [V]: ±20
  • Manufacturer: Eris
P5MNG3P0

P5MNG3P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3.6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 85
  • Manufacturer: Eris
P5MNG3P6

P5MNG4P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 65
  • RDS(ON) @10V [mΩ]: 4.4
  • RDS(ON) @4,5V [mΩ]: 7.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 95
  • Manufacturer: Eris
P5MNG4P4

P5MNG4P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 4.6
  • RDS(ON) @4,5V [mΩ]: 5.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNG4P6

P5MNG8P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 8
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 62
  • Manufacturer: Eris
P5MNG8P0
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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