MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P5MNG8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 8.5
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
P5MNG8P5

P5MNK012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 82
  • Manufacturer: Eris
P5MNK012

P5MNK3P9

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 3.9
  • RDS(ON) @4,5V [mΩ]: 6.2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNK3P9

P5MNK4P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 4
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 130
  • Manufacturer: Eris
P5MNK4P0

P5MNK5P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 85
  • RDS(ON) @10V [mΩ]: 5.6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNK5P6

P5MNK7P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 7.2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
P5MNK7P2

P5MNM015

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 15
  • RDS(ON) @4,5V [mΩ]: 25
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 41
  • Manufacturer: Eris
P5MNM015

P5MNM020

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
P5MNM020

P5MNM020A

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 25
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
P5MNM020A

P5MNM3P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 3.6
  • RDS(ON) @4,5V [mΩ]: 5.1
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 140
  • Manufacturer: Eris
P5MNM3P6
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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