MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P5MPC8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 8.5
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -60
  • Manufacturer: Eris
P5MPC8P5

P5MPD5P8

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 5.8
  • RDS(ON) @4,5V [mΩ]: 8.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -85
  • Manufacturer: Eris
P5MPD5P8

P5MPG040

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 40
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -28.8
  • Manufacturer: Eris
P5MPG040

P5MPG085

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 101
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -14.4
  • Manufacturer: Eris
P5MPG085

P5MPG8P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 8.6
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -72
  • Manufacturer: Eris
P5MPG8P6

P5MPM050

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 50
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -8
  • Manufacturer: Eris
P5MPM050

P5MPM052

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: 62
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -50
  • Manufacturer: Eris
P5MPM052

P6MNC4P2

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9,5 / 4,2
  • RDS(ON) @4,5V [mΩ]: 14,5 / 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 43 / 85
  • Manufacturer: Eris
P6MNC4P2

P6MNC6P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9 / 6
  • RDS(ON) @4,5V [mΩ]: 13 / 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55 / 80
  • Manufacturer: Eris
P6MNC6P0

P6MNC9P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P6MNC9P0
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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