RF-Switch

Nisshinbo Micro Devices provides RF switches that cover various communication applications such as 5G, Wi-Fi 6/6E and so on. The advantages of high performance switches are low insertion loss, high isolation and high linearity even if high frequency band by our unique GaAs process. Furthermore, integrated ESD protection elements achieve excellent ESD robustness.They also offer automotive grade products. In addition, Nisshinbo develop RF devices by SOI process.

There are 4 of 44 products shown.

NJG1816K75

  • Package (RF-Switch): DFN6-75
  • Features: SPDT Switch
  • P-1dB [dBm]: 30@920MHz 30@2.5GHz
  • Power Level: High Power
  • Insertion Loss [dB]: 0,45@920MHz 0,50@2,4 to 2,5GHz
  • Isolation [dB]: 30@920MHz 22@2,4 to 2,5GHz
  • Manufacturer: Nisshinbo
NJG1816K75

NJG1817ME4

  • Package (RF-Switch): EQFN12-E4
  • Features: SPDT Switch
  • P-1dB [dBm]: 40
  • Power Level: High Power
  • Insertion Loss [dB]: 0,35@3,85GHz 0,4@4,7GHz 0,45@6,0GHz
  • Isolation [dB]: 27@3,85GHz 27@4,7GHz 25@6,0GHz
  • Manufacturer: Nisshinbo
NJG1817ME4

NJG1818K75

  • Package (RF-Switch): DFN6-75
  • Features: SPDT Switch
  • P-1dB [dBm]: 31
  • Power Level: High Power
  • Insertion Loss [dB]: 0,50 @2,4 to 2,5 GHz 0,50 @4,9 to 5,9 GHz 0,55 @5,9 to 7,125 GHz
  • Isolation [dB]: 25dB @2,4 to 2,5 GHz 25dB @4,9 to 5,9 GHz 25dB @5,9 to 7,125 GHz
  • Manufacturer: Nisshinbo
NJG1818K75

NJU1206MER

  • Package (RF-Switch): EQFN14-ER
  • Features: SP6T Switch
  • P-1dB [dBm]: 34
  • Power Level: High Power
  • Insertion Loss [dB]: 0,30@0,9GHz 0,40@1,9GHz 0,50@2,7GHz
  • Isolation [dB]: 40@0,9GHz 30@1,9GHz 26@2,7GHz
  • Manufacturer: Nisshinbo
NJU1206MER
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P-1dB [dBm]

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