MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

N3MNB5P8

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 5.8
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNB5P8

N3MNB8P0

  • Package: DFN3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 24
  • Manufacturer: Eris
N3MNB8P0

N4MNC011

  • Package: DFN3X3A
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 9
  • Manufacturer: Eris
N4MNC011

N5MNB6P7

  • Package: DFN2X3-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 6.7
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 32
  • Manufacturer: Eris
N5MNB6P7

N8MNB013

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 9.9
  • Manufacturer: Eris
N8MNB013

N8MNC013

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
N8MNC013

N8MNC019

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 19
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
N8MNC019

N8MPB012

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11
  • Manufacturer: Eris
N8MPB012

N8MPB017

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 17
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11.5
  • Manufacturer: Eris
N8MPB017

N8MPB028

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -8.5
  • Manufacturer: Eris
N8MPB028
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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