MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P3MBC013A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 13 / 25
  • RDS(ON) @4,5V [mΩ]: 16 / 38
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 28 / -19,7
  • Manufacturer: Eris
P3MBC013A

P3MBC020A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 50
  • RDS(ON) @4,5V [mΩ]: 30 / 75
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12 / -8
  • Manufacturer: Eris
P3MBC020A

P3MNB012

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MNB012

P3MNB022

  • Package: PPAK3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
P3MNB022

P3MNC010

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 10
  • RDS(ON) @4,5V [mΩ]: 13.8
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 38
  • Manufacturer: Eris
P3MNC010

P3MNC011A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC011A

P3MNC012

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC012

P3MNC012A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC012A

P3MNC013

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC013

P3MNC018

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 25
  • Manufacturer: Eris
P3MNC018
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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