MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

I2MNAB25H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
I2MNAB25H

I2MNAB340

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 340
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 14
  • Manufacturer: Eris
I2MNAB340

I2MNAB850

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 850
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
I2MNAB850

I2MNAB900

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 900
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
I2MNAB900

LFMND0P7

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 0.7
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 455
  • Manufacturer: Eris
LFMND0P7

LFMNK1P9

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 85
  • RDS(ON) @10V [mΩ]: 1.9
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 313
  • Manufacturer: Eris
LFMNK1P9

LFMNM2P3

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 2.3
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 282
  • Manufacturer: Eris
LFMNM2P3

LFSNAL052

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 63
  • Manufacturer: Eris
LFSNAL052

N1MNB002

  • Package: DFN3.3X3.3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
N1MNB002

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4.3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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