Schottky Diodes/Rectifier (SiC)

Schottky diodes/rectifier have a low total capacitive charge, which reduces switching losses and at the same time enables a fast switching process. Schottky diodes based on silicon carbide (SiC) are characterized by constant properties in contrast to silicon (Si) based diodes with a short recovery time, where the reverse recovery time increases with the temperature, resulting in better performance.

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There are 5 of 15 products shown.

ESIC0606S

  • Package: TO-220AC
  • VRRM [V]: 600 V
  • IF [A]: 6 A
  • IFSM max. [A]: 75 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 26 nC
  • VF @ IF max. [V]: 1.7 V
  • Manufacturer: Eris
ESIC0606S

ESIC08065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 8 A
  • IFSM max. [A]: 56 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 30 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC08065S

ESIC10065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 10 A
  • IFSM max. [A]: 60 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 36 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC10065S

ESIC10120S

  • Package: TO-220AC
  • VRRM [V]: 1,200 V
  • IF [A]: 10 A
  • IFSM max. [A]: 60 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 56.5 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC10120S

ESIC20065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 20 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 56 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC20065S

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