MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

T2MNAB12H

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1200
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
T2MNAB12H

T2MNAB25H

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
T2MNAB25H

T2MNC4P0

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 4
  • RDS(ON) @4,5V [mΩ]: 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 140
  • Manufacturer: Eris
T2MNC4P0

T2MNC9P0

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
T2MNC9P0

T2MNG012

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55
  • Manufacturer: Eris
T2MNG012

T2MNM012

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 11.5
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM012

T2MNM7P6

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7.6
  • RDS(ON) @4,5V [mΩ]: 11.4
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM7P6

T2MNM9P7

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9.7
  • RDS(ON) @4,5V [mΩ]: 14.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
T2MNM9P7

T2MNN7P2

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 120
  • RDS(ON) @10V [mΩ]: 7.2
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 125
  • Manufacturer: Eris
T2MNN7P2

T2MNP7P5

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 7.5
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 154
  • Manufacturer: Eris
T2MNP7P5
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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