MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

S8MPC9P5

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 9.5
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -13
  • Manufacturer: Eris
S8MPC9P5

S8MPD015

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 15
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -10
  • Manufacturer: Eris
S8MPD015

S8MPD035

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 35
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -6
  • Manufacturer: Eris
S8MPD035

S8MPG030

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 40
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -8.5
  • Manufacturer: Eris
S8MPG030

S8MPG072

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 72
  • RDS(ON) @4,5V [mΩ]: 90
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -3.3
  • Manufacturer: Eris
S8MPG072

S8MPG105

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 105
  • RDS(ON) @4,5V [mΩ]: 145
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -4
  • Manufacturer: Eris
S8MPG105

S9MNB022

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
S9MNB022

S9MPA021

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -16
  • RDS(ON) @4,5V [mΩ]: 21.1
  • VGS max, [V]: ±16
  • ID @T=25°C [A]: -8
  • Manufacturer: Eris
S9MPA021

S9MPB016

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11
  • Manufacturer: Eris
S9MPB016

S9MPC016

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 16
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -10
  • Manufacturer: Eris
S9MPC016
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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