Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 2541 products shown.

I2MNAB120

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 120
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 19.3
  • Manufacturer: Eris
I2MNAB120

I2MNAB12H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1200
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB12H

I2MNAB13H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB13H

I2MNAB190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 16.5
  • Manufacturer: Eris
I2MNAB190

I2MNAB25H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
I2MNAB25H

I2MNAB340

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 340
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 14
  • Manufacturer: Eris
I2MNAB340

I2MNAB850

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 850
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
I2MNAB850

I2MNAB900

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 900
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
I2MNAB900

LFMND0P7

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 0.7
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 455
  • Manufacturer: Eris
LFMND0P7

LFMNK1P9

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 85
  • RDS(ON) @10V [mΩ]: 1.9
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 313
  • Manufacturer: Eris
LFMNK1P9