Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 2541 products shown.

ESIC05120SD

  • Package: TO-252 (D-PAK)
  • VRRM [V]: 1,200 V
  • IF [A]: 5 A
  • IFSM max. [A]: 50 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 36 nC
  • VF @ IF max. [V]: 1.7 V
  • Manufacturer: Eris
ESIC05120SD

ESIC06065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 6 A
  • IFSM max. [A]: 42 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 23 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC06065S

ESIC06065SF

  • Package: ITO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 6 A
  • IFSM max. [A]: 40 A
  • IR @ VRRM max. [μA]: 50 μA
  • QC typ. [nC]: 23 nC
  • VF @ IF max. [V]: 1.7 V
  • Manufacturer: Eris
ESIC06065SF

ESIC0606S

  • Package: TO-220AC
  • VRRM [V]: 600 V
  • IF [A]: 6 A
  • IFSM max. [A]: 75 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 26 nC
  • VF @ IF max. [V]: 1.7 V
  • Manufacturer: Eris
ESIC0606S

ESIC08065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 8 A
  • IFSM max. [A]: 56 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 30 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC08065S

ESIC10065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 10 A
  • IFSM max. [A]: 60 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 36 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC10065S

ESIC10120S

  • Package: TO-220AC
  • VRRM [V]: 1,200 V
  • IF [A]: 10 A
  • IFSM max. [A]: 60 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 56.5 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC10120S

ESIC20065S

  • Package: TO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 20 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 100 μA
  • QC typ. [nC]: 56 nC
  • VF @ IF max. [V]: 1.8 V
  • Manufacturer: Eris
ESIC20065S

I2MNAA190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 13
  • Manufacturer: Eris
I2MNAA190

I2MNAA380

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 380
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 9.1
  • Manufacturer: Eris
I2MNAA380