MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

TNMNC042

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 42
  • RDS(ON) @4,5V [mΩ]: 48
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 4.2
  • Manufacturer: Eris
TNMNC042

TNMND045

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 45
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMND045

TNMNF16H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1.6
  • RDS(ON) @4,5V [mΩ]: 2.5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.36
  • Manufacturer: Eris
TNMNF16H

TNMNF30H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 50
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TNMNF30H

TNMNG100

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 2.3
  • Manufacturer: Eris
TNMNG100

TNMNG100A

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 3
  • Manufacturer: Eris
TNMNG100A

TNMNG30H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TNMNG30H

TNMNM125

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 125
  • RDS(ON) @4,5V [mΩ]: 135
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMNM125

TNMNM310

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 310
  • RDS(ON) @4,5V [mΩ]: 320
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 1.2
  • Manufacturer: Eris
TNMNM310

TNMNM55H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5500
  • RDS(ON) @4,5V [mΩ]: 6500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TNMNM55H
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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