MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 393 products shown.

P5MBC012

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 12 / 29
  • RDS(ON) @4,5V [mΩ]: 18 / 46
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 23,3 / -15,2
  • Manufacturer: Eris
P5MBC012

P5MBD012

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 11,5 / 30
  • RDS(ON) @4,5V [mΩ]: 16 / 45
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42 / -27
  • Manufacturer: Eris
P5MBD012

P5MBG040

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 40 / 70
  • RDS(ON) @4,5V [mΩ]: 45 / 105
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,06 / -4,58
  • Manufacturer: Eris
P5MBG040

P5MBM075

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 100 / -100
  • RDS(ON) @10V [mΩ]: 75 / 210
  • RDS(ON) @4,5V [mΩ]: 300 / 230
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8 / -6,5
  • Manufacturer: Eris
P5MBM075

P5MNC011

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P5MNC011

P5MNC012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 48
  • Manufacturer: Eris
P5MNC012

P5MNC018

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 29
  • Manufacturer: Eris
P5MNC018

P5MNC0P9

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 0.85
  • RDS(ON) @4,5V [mΩ]: 1.15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNC0P9

P5MNC1P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 1
  • RDS(ON) @4,5V [mΩ]: 1.4
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 254
  • Manufacturer: Eris
P5MNC1P0

P5MNC1P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 1.2
  • RDS(ON) @4,5V [mΩ]: 2.2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 240
  • Manufacturer: Eris
P5MNC1P2
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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