EBRP3E60AF

Submit inquiry Data sheet download

Specification

  • Package: DO-221AC (SMAF)
  • VRRM [V]: 60 V
  • IF [A]: 3 A
  • IFSM max. [A]: 100 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.5 V
  • Automotive: yes

Start product inquiry

If you are interested, start your non-committal product inquiry below:

Produktdaten
Company data
Personal data
Address data
Contact data
Legal information

request for sample

If we have aroused your interest, start your non-committal sample inquiry here.
Produktdaten
Company data
Personal data
Address data
Contact data
Legal information

Manufacturer

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

This could be of interest to you

1N5817

  • Package: DO-41
  • VRRM [V]: 20 V
  • IF [A]: 1 A
  • IFSM max. [A]: 25 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.5 V
  • Manufacturer: Eris
1N5817

1N5817W

  • Package: SOD-123
  • VRRM [V]: 20 V
  • IF [A]: 1 A
  • IFSM max. [A]: 9 A
  • IR @ VRRM max. [μA]: 1,000 μA
  • VF @ IF max. [V]: 0.45 V
  • Manufacturer: Eris
1N5817W

1N5818

  • Package: DO-41
  • VRRM [V]: 30 V
  • IF [A]: 1 A
  • IFSM max. [A]: 25 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.55 V
  • Manufacturer: Eris
1N5818

1N5818W

  • Package: SOD-123
  • VRRM [V]: 30 V
  • IF [A]: 1 A
  • IFSM max. [A]: 9 A
  • IR @ VRRM max. [μA]: 1,000 μA
  • VF @ IF max. [V]: 0.55 V
  • Manufacturer: Eris
1N5818W

1N5819

  • Package: DO-41
  • VRRM [V]: 40 V
  • IF [A]: 1 A
  • IFSM max. [A]: 25 A
  • IR @ VRRM max. [μA]: 500 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
1N5819

1N5819W

  • Package: SOD-123
  • VRRM [V]: 40 V
  • IF [A]: 1 A
  • IFSM max. [A]: 9 A
  • IR @ VRRM max. [μA]: 1,000 μA
  • VF @ IF max. [V]: 0.6 V
  • Manufacturer: Eris
1N5819W

1S100

  • Package: R-1
  • VRRM [V]: 100 V
  • IF [A]: 1 A
  • IFSM max. [A]: 20 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.85 V
  • Manufacturer: Eris
1S100

1S20

  • Package: R-1
  • VRRM [V]: 20 V
  • IF [A]: 1 A
  • IFSM max. [A]: 20 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.52 V
  • Manufacturer: Eris
1S20

1S30

  • Package: R-1
  • VRRM [V]: 30 V
  • IF [A]: 1 A
  • IFSM max. [A]: 20 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.55 V
  • Manufacturer: Eris
1S30

1S40

  • Package: R-1
  • VRRM [V]: 40 V
  • IF [A]: 1 A
  • IFSM max. [A]: 20 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.55 V
  • Manufacturer: Eris
1S40