Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 2541 products shown.

P6SMB91CA

  • Package: DO-214AA (SMB)
  • VWM [V]: 77.8 V
  • VBR [V]: 86.45 V
  • VC [V]: 125 V
  • PPP [W]: 600 W
  • Lines [No.]: 1
  • Manufacturer: Eris
P6SMB91CA

S8MBC012

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 12 / 25
  • RDS(ON) @4,5V [mΩ]: 18 / 42
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12 / -9,8
  • Manufacturer: Eris
S8MBC012

S8MBC020

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 50
  • RDS(ON) @4,5V [mΩ]: 30 / 90
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8 / -5,5
  • Manufacturer: Eris
S8MBC020

S8MBC020A

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 32
  • RDS(ON) @4,5V [mΩ]: 30 / 46
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 7,5 / -6
  • Manufacturer: Eris
S8MBC020A

S8MBC021

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 21 / 35
  • RDS(ON) @4,5V [mΩ]: 31 / 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 7 / -6
  • Manufacturer: Eris
S8MBC021

S8MBD032

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 45 / 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,7 / -7,2
  • Manufacturer: Eris
S8MBD032

S8MBG030

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 30 / 48
  • RDS(ON) @4,5V [mΩ]: 36 / 68
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5,9 / -4,7
  • Manufacturer: Eris
S8MBG030

S8MBG036

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 36 / 70
  • RDS(ON) @4,5V [mΩ]: 38 / 85
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12,5 / -9,7
  • Manufacturer: Eris
S8MBG036

S8MBG052

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 52 / 100
  • RDS(ON) @4,5V [mΩ]: 75 / 105
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5,1 / -3,6
  • Manufacturer: Eris
S8MBG052

S8MBG054

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 54 / 105
  • RDS(ON) @4,5V [mΩ]: 63 / 145
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4,5 / -3,5
  • Manufacturer: Eris
S8MBG054