Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016

There are 10 of 2541 products shown.

MBR4045CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 45 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.7 V
  • Manufacturer: Eris
MBR4045CD2

MBR4050CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 50 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.8 V
  • Manufacturer: Eris
MBR4050CD2

MBR4060CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 60 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 100 μA
  • VF @ IF max. [V]: 0.8 V
  • Manufacturer: Eris
MBR4060CD2

MBR4080CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 80 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.85 V
  • Manufacturer: Eris
MBR4080CD2

MBR4090CD2

  • Package: TO-263 (D2-PAK)
  • VRRM [V]: 90 V
  • IF [A]: 40 A
  • IFSM max. [A]: 200 A
  • IR @ VRRM max. [μA]: 50 μA
  • VF @ IF max. [V]: 0.85 V
  • Manufacturer: Eris
MBR4090CD2

N1MNB002

  • Package: DFN3.3X3.3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
N1MNB002

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4.3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3

N3MNB5P8

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 5.8
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNB5P8

N3MNB8P0

  • Package: DFN3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 24
  • Manufacturer: Eris
N3MNB8P0

N4MNC011

  • Package: DFN3X3A
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 9
  • Manufacturer: Eris
N4MNC011